| PART |
Description |
Maker |
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N |
(1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
http://
RECTRON[Rectron Semiconductor]
|
| 1G1-15 |
Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere
Glass Passivated Junction Rectifiers
|
GOOD-ARK Electronics
|
| 1N3957GP 1N3611GP 1N3612GP 1N3613GP 1N3614GP |
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
Glass Passivated Junction Rectifier(钝化玻璃结型整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| FR301G FR307G FR302G FR303G FR304G FR305G FR306G F |
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
1000 V, 3 A, glass passivated junction fast recovery rectifier
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 800V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay
|
| UGF10D UGF10K UGF10A UGF10B UGF10F UGF10G UGF10J |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFACE EFFICIENT RECTIFIER
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
ZOWIE[Zowie Technology Corporation]
|
| GRN305 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
| T10B T10B035 T10B065 T10B120 T10B140 T10B200 T10B2 |
Glass passivated junction
|
LITTELFUSE[Littelfuse]
|
